US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on Oct. 14 for "Semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,295, issued on Oct. 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor device" was invented by Fei Zhou (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided in the present disclosure. The semiconductor device includes a substrate, a plurality of fins formed on the substrate, a dummy gate structure formed across the plurality of fins and on the substrate, a first sidewall spacer formed on a sidewall of the dummy gate structure, an interlayer dielectric layer formed on a surface portion o...