US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on Nov. 4 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,049, issued on Nov. 4, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and forming method thereof" was invented by Bo Su (Shanghai), Zhenyang Zhao (Shanghai) and Haiyang Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and forming methods are disclosed. One form of a method includes: forming mask spacers on a base; patterning a target layer using the mask spacers as masks, to form discrete initial pattern layers, where the initial pattern layers extend along a lateral direction ...