US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on June 24 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,593, issued on June 24, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and fabrication method thereof" was invented by Fei Zhou (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a base substrate including a first region and a second region. The semiconductor further includes a first fin member located over the first region, a second fin member located over the second region, a first dummy gate across a surface of the first fin member, and a second dummy gate across a surfac...