US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on June 24 for "Semiconductor device and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,022, issued on June 24, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor device and fabrication method thereof" was invented by Jisong Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device is provided. The semiconductor device includes a to-be-etched layer having a plurality of first regions and a plurality of second regions that are alternately arranged along a first direction, where the second region includes a second trench region; a first mask layer on the plurality of first regions and the plur...