US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on June 10 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,904, issued on June 10, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and forming method thereof" was invented by Jisong Jin (Shanghai) and Abraham Yoo (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same are provided. In one form, a semiconductor structure includes: a substrate and protruding portions protruding from the substrate in sub-device regions; channel structure layers located on the protruding portions and spaced apart from the protruding p...