US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on July 29 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,328, issued on July 29, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and forming method thereof" was invented by Jisong Jin (Shanghai), Subhash Kuchanuri (Shanghai) and Abraham Yoo (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes: a substrate; discrete channel structures on the substrate in device regions; a power rail line, located in the substrate of a power rail region; a gate structure, extending across the channel structures;...