US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on July 1 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,455, issued on July 1, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and fabrication method thereof" was invented by Dengfeng Ji (Shanghai) and Yi Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate including a first region and a second region, first gate structures, second gate structures, first source-drain doped layers, second source-drain doped layers, and a f...