US Patent Issued to SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI), SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) on Feb. 4 for "Method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,004, issued on Feb. 4, was assigned to SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. (Shanghai) and SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) Corp. (Beijing).

"Method for forming semiconductor structure" was invented by He Zuopeng (Shanghai), Yang Ming (Shanghai) and Bei Duohui (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base; forming a pattern memory layer on the base, where at least a first trench and a second trench are provided on the pattern memory layer, where an extending direction of the first trench is p...