US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on Aug. 12 for "Semiconductor structure and method of forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,673, issued on Aug. 12, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure and method of forming semiconductor structure" was invented by Jian Chen (Shanghai), Shiliang Ji (Shanghai) and Haiyang Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and method of forming semiconductor structure are provided. The semiconductor structure includes a substrate, a first isolation structure, and a first nanostructure and a second nanostructure on two sides of the first isolation structure. The...