US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on April 22 for "Semiconductor device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,523, issued on April 22, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor device and fabrication method thereof" was invented by Tiantian Zhang (Shanghai) and Xuezhen Jing (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a fabrication method of the semiconductor device are provided. The semiconductor device includes a substrate, a source-drain plug layer in the substrate, a gate structure in the substrate, and a dielectric layer disposed over the substrate and covering the gate structure and t...