US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on April 22 for "Method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,517, issued on April 22, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Method for forming semiconductor structure" was invented by Pengchong Li (Shanghai), Xuejie Shi (Shanghai), Hansu Oh (Shanghai) and Bo Su (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base, a dummy gate structure, a source-drain doped region, and an interlayer dielectric layer; removing the dummy gate structure located at an isolation region to form an iso...