ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,443,100, issued on Oct. 14, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).
"Mask pattern" was invented by Qiang Shu (Shanghai), Yingchun Zhang (Shanghai) and Liusha Qin (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includ...