US Patent Issued to Semiconductor Energy Laboratory on Sept. 9 for "Semiconductor device comprising conductive layers functioning as first and second gate electrodes of a transistor" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,335, issued on Sept. 9, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device comprising conductive layers functioning as first and second gate electrodes of a transistor" was invented by Shunpei Yamazaki (Setagaya, Japan), Daisuke Matsubayashi (Atsugi, Japan) and Keisuke Murayama (Chigasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating ...