ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,631, issued on Sept. 9, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Yoshiyuki Kurokawa (Kanagawa, Japan), Satoru Ohshita (Kanagawa, Japan) and Hidefumi Rikimaru (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a novel structure is provided. The semiconductor device includes memory layers and a driver circuit layer. The memory layers are stacked over the driver circuit layer and each include a memory cell array including a plurality of memory cells. Writing or reading of data to or from one of the memory cells is controlled with a write word line,...