US Patent Issued to Semiconductor Energy Laboratory on Sept. 9 for "Insulating film, method for manufacturing semiconductor device, and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,334, issued on Sept. 9, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Insulating film, method for manufacturing semiconductor device, and semiconductor device" was invented by Kenichi Okazaki (Tochigi, Japan), Toshinari Sasaki (Shinagawa, Japan), Shuhei Yokoyama (Tochigi, Japan) and Takashi Hamochi (Shimotsuga, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the f...