ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,207, issued on Sept. 30, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Masayuki Sakakura (Isehara, Japan), Yuugo Goto (Isehara, Japan), Hiroyuki Miyake (Atsugi, Japan) and Daisuke Kurosaki (Tochigi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a p...