ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,019, issued on Sept. 30, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Takahiko Ishizu (Kanagawa, Japan), Takayuki Ikeda (Kanagawa, Japan), Atsushi Miyaguchi (Kanagawa, Japan) and Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a novel structure is provided. The semiconductor device includes a p-channel transistor and an n-channel transistor provided over a silicon substrate. One of a source and a drain of the p-channel transistor is electrically connected to a first power supply line, one of a source and a drain of the n-channel ...