US Patent Issued to Semiconductor Energy Laboratory on Sept. 23 for "Semiconductor device having light-emitting element" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,306, issued on Sept. 23, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device having light-emitting element" was invented by Shunpei Yamazaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that can operate at high speed or having high strength against stress is provided. One embodiment of the present invention is a semiconductor device including a semiconductor film including a channel formation region and a pair of impurity regions between which the channel formation region is positioned; a gate electrode overlapping side and top portions of the channel formation region with ...