ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,366, issued on Sept. 23, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Daisuke Matsubayashi (Atsugi, Japan) and Yutaka Okazaki (Isehara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly integrated semiconductor device including the transistor is provided. A short-channel effect which is caused in a transistor including silicon is not substantially caus...