US Patent Issued to Semiconductor Energy Laboratory on Sept. 16 for "Positive electrode active material particle" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,418,021, issued on Sept. 16, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Positive electrode active material particle" was invented by Masahiro Takahashi (Kanagawa, Japan), Teruaki Ochiai (Kanagawa, Japan), Yohei Momma (Kanagawa, Japan) and Ayae Tsuruta (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal...