US Patent Issued to Semiconductor Energy Laboratory on Sept. 16 for "Hole-transport layer material, electron-blocking layer material, electron-transport layer material, hole-blocking layer material, light-emitting device, light-emitting apparatus, electronic device, and lighting device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,155, issued on Sept. 16, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Hole-transport layer material, electron-blocking layer material, electron-transport layer material, hole-blocking layer material, light-emitting device, light-emitting apparatus, electronic device, and lighting device" was invented by Takeyoshi Watabe (Kanagawa, Japan), Hiromi Seo (Kanagawa, Japan), Airi Ueda (Kanagawa, Japan), Yuta Kawano (Kanagawa, Japan), Tomohiro Kubota (Kanagawa, Japan), Yasushi Kitano (Kanagawa, Japan), Takao Tosu (Kanagawa, Japan), Nobuharu Ohsawa (Kanagawa, Japan) and Satoshi Seo (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & T...