US Patent Issued to Semiconductor Energy Laboratory on Oct. 7 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,581, issued on Oct. 7, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Ryota Hodo (Atsugi, Japan), Katsuaki Tochibayashi (Isehara, Japan), Toshiya Endo (Atsugi, Japan) and Shunpei Yamazaki (Setagaya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor including a gate electrode, a source electrode, and a drain electrode; a first insulator over the transistor; a second insulator over the first insulator; a third ...