US Patent Issued to Semiconductor Energy Laboratory on Oct. 7 for "Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,985, issued on Oct. 7, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate" was invented by Shunpei Yamazaki (Setagaya, Japan), Masataka Sato (Tochigi, Japan), Satoru Idojiri (Tochigi, Japan) and Natsuko Takase (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second...