ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,773, issued on Oct. 28, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Yukinori Shima (Tatebayashi, Japan), Masakatsu Ohno (Utsunomiya, Japan) and Takumi Shigenobu (Tochigi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor l...