ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,732, issued on Oct. 28, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Memory cell and memory device" was invented by Shuhei Nagatsuka (Kanagawa, Japan), Tatsuya Onuki (Kanagawa, Japan) and Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device occupying a small area is provided. In a memory cell including a reading transistor, a writing transistor, and a capacitor, the writing transistor is provided above the reading transistor. Alternatively, the reading transistor is provided above the writing transistor. An oxide semiconductor is used for a semiconductor layer where a channel of the wri...