US Patent Issued to Semiconductor Energy Laboratory on Oct. 21 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,130, issued on Oct. 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Akio Suzuki (Atsugi, Japan) and Haruyuki Baba (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device for high power consumption is provided. The semiconductor device includes a substrate, a first conductor over the substrate, a first metal oxide over the first conductor, a first oxide over the first metal oxide, a second oxide over the first oxide, a first insulator over the second oxide, a second conductor over the first insulator, a ...