US Patent Issued to Semiconductor Energy Laboratory on Oct. 21 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,187, issued on Oct. 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Erika Takahashi (Kanagawa, Japan), Kunihiro Fukushima (Kanagawa, Japan), Katsuaki Tochibayashi (Kanagawa, Japan) and Ryota Hodo (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator; forming a thi...