ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,134, issued on Oct. 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Toshihiko Takeuchi (Atsugi, Japan), Naoto Yamade (Isehara, Japan), Yutaka Okazaki (Isehara, Japan), Sachiaki Tezuka (Atsugi, Japan) and Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the f...