ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,073, issued on Oct. 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Hitoshi Kunitake (Kanagawa, Japan), Takayuki Ikeda (Kanagawa, Japan) and Takahiro Fukutome (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A small-size semiconductor device is provided. The semiconductor device includes a first layer, a second layer, and a third layer formed over a substrate. A first transistor included in the first layer includes a first semiconductor layer containing Si. A second transistor included in the second layer includes a second semiconductor layer containing Ga. A third t...