US Patent Issued to Semiconductor Energy Laboratory on Oct. 14 for "Semiconductor device sensor unit" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,779, issued on Oct. 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device sensor unit" was invented by Takanori Matsuzaki (Atsugi, Japan), Takayuki Ikeda (Atsugi, Japan), Munehiro Kozuma (Atsugi, Japan), Ryota Tajima (Isehara, Japan) and Hiroki Inoue (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A novel semiconductor device that is highly convenient or reliable is provided.The semiconductor device includes a sensor unit, a first memory unit, a second memory unit, and a determination unit. The sensor unit supplies a sensor signal, the first memory unit retains the sensor signal, the second...