US Patent Issued to Semiconductor Energy Laboratory on Oct. 14 for "Method for forming capacitor, semiconductor device, module, and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,302, issued on Oct. 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for forming capacitor, semiconductor device, module, and electronic device" was invented by Tetsuhiro Tanaka (Kiyose, Japan) and Yutaka Okazaki (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provide...