ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,316, issued on Oct. 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Metal oxide and semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Motoki Nakashima (Atsugi, Japan) and Haruyuki Baba (Isehara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference be...