ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,466, issued on Oct. 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Memory device and method for manufacturing the same" was invented by Kazuki Tsuda (Kanagawa, Japan), Hiromichi Godo (Kanagawa, Japan), Satoru Ohshita (Kanagawa, Japan), Hitoshi Kunitake (Kanagawa, Japan) and Satoru Okamoto (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A highly reliable memory device is provided. The memory device includes a first conductor, a second conductor above the first conductor, a third conductor above the second conductor, a fourth conductor above the third conductor, a fifth conductor above the fourth c...