US Patent Issued to Semiconductor Energy Laboratory on Nov. 4 for "Semiconductor device including metal oxide" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,777, issued on Nov. 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device including metal oxide" was invented by Shunpei Yamazaki (Setagaya, Japan), Shinya Sasagawa (Chigasaki, Japan), Ryota Hodo (Atsugi, Japan), Takashi Hirose (Yokohama, Japan), Yoshihiro Komatsu (Ebina, Japan), Katsuaki Tochibayashi (Isehara, Japan) and Kentaro Sugaya (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semicondu...