US Patent Issued to Semiconductor Energy Laboratory on Nov. 4 for "Graphene and power storage device, and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,217, issued on Nov. 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Graphene and power storage device, and manufacturing method thereof" was invented by Hiroatsu Todoriki (Kanagawa, Japan), Yumiko Saito (Kanagawa, Japan), Takahiro Kawakami (Kanagawa, Japan), Kuniharu Nomoto (Saitama, Japan) and Mikio Yukawa (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an...