ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,270, issued on Nov. 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Kosei Nei (Yokohama, Japan), Tsutomu Murakawa (Isehara, Japan), Toshihiko Takeuchi (Atsugi, Japan) and Kentaro Sugaya (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed ...