ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,837, issued on Nov. 18, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).
"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Tokyo), Naoki Okuno (Kanagawa, Japan), Yuichi Sato (Kanagawa, Japan), Takashi Hirose (Kanagawa, Japan) and Yuko Takabayashi (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a thir...