US Patent Issued to Semiconductor Energy Laboratory on Nov. 18 for "Memory device and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,952, issued on Nov. 18, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Memory device and electronic device" was invented by Tatsuya Onuki (Atsugi, Japan) and Takayuki Ikeda (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device with high storage capacity and low power consumption is provided. The memory device includes a first layer and a second layer including the first layer. The first layer includes a circuit, and the second layer includes a first memory cell. The circuit includes a bit line driver circuit and/or a word line driver circuit which transmits(s) a signal to the first memory cell. The...