US Patent Issued to Semiconductor Energy Laboratory on Nov. 11 for "Ferroelectric device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,290, issued on Nov. 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Ferroelectric device and semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Tomonori Nakayama (Atsugi, Japan), Masahiro Takahashi (Atsugi, Japan) and Hitoshi Kunitake (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric device (100) that includes a metal nitride film (130) with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (110), a metal nitride film over the first conductor, a second conductor (120) over the metal nitride film, a first insulator (155) over ...