ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,600, issued on May 27, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor material and semiconductor device" was invented by Hitoshi Kunitake (Kanagawa, Japan) and Shuhei Nagatsuka (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which an electrification phenomenon that leads to characteristic fluctuations, element deterioration, or dielectric breakdown is inhibited is provided. A first transistor, a second transistor, a third transistor, and a fourth transistor are included over a substrate; the fourth transistor includes a first conductor, a second conductor, a third co...