ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,717, issued on May 27, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Method for manufacturing metal oxynitride film" was invented by Kazuki Tanemura (Kanagawa, Japan), Shota Sambonsuge (Chiba, Japan) and Naoki Okuno (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxid...