US Patent Issued to Semiconductor Energy Laboratory on May 13 for "Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,820, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same" was invented by Teppei Oguni (Kanagawa, Japan), Takeshi Osada (Kanagawa, Japan), Toshihiko Takeuchi (Kanagawa, Japan) and Kuniharu Nomoto (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an elec...