US Patent Issued to Semiconductor Energy Laboratory on May 13 for "Semiconductor device including storage capacitor having pixel electrode, directly stacked conductive layer, and insulating layer interposed between them, wherein the stacked conductive layers extending towards the gate and source wirings/lines" (Japanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,702, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device including storage capacitor having pixel electrode, directly stacked conductive layer, and insulating layer interposed between them, wherein the stacked conductive layers extending towards the gate and source wirings/lines" was invented by Hajime Kimura (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method ther...