US Patent Issued to Semiconductor Energy Laboratory on May 13 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,484, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Yuichi Yanagisawa (Atsugi, Japan), Hiromi Sawai (Atsugi, Japan) and Daisuke Matsubayashi (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide ...