ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,752, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Kiyoshi Kato (Kanagawa, Japan), Tomoaki Atsumi (Kanagawa, Japan), Shuhei Nagatsuka (Kanagawa, Japan), Hitoshi Kunitake (Kanagawa, Japan) and Yoko Tsukamoto (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which an electrification phenomenon that leads to characteristic fluctuations, element deterioration, abnormality in shape, or dielectric breakdown is inhibited is provided.The semiconductor device includes a first region and a second region over th...