ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,639, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Metal oxide film and method for forming metal oxide film" was invented by Masahiro Takahashi (Kanagawa, Japan), Takuya Hirohashi (Kanagawa, Japan), Masashi Tsubuku (Kanagawa, Japan), Noritaka Ishihara (Kanagawa, Japan) and Masashi Oota (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffract...