US Patent Issued to Semiconductor Energy Laboratory on May 13 for "Light-emitting device comprising charge-generation layer between light-emitting units" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,688, issued on May 13, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Light-emitting device comprising charge-generation layer between light-emitting units" was invented by Takeyoshi Watabe (Kanagawa, Japan), Airi Ueda (Kanagawa, Japan), Nobuharu Ohsawa (Kanagawa, Japan) and Satoshi Seo (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting device is provided. The light-emitting device includes an intermediate layer, a first light-emitting unit, and a second light-emitting unit. The intermediate layer includes a region interposed between the first light-emitting unit and the second light-emitting unit. T...