US Patent Issued to Semiconductor Energy Laboratory on March 4 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,945, issued on March 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Haruyuki Baba (Isehara, Japan), Naoki Okuno (Yamato, Japan), Yoshihiro Komatsu (Ebina, Japan) and Toshikazu Ohno (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over th...