ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,943, issued on March 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Takahiro Sato (Tochigi, Japan), Yasutaka Nakazawa (Tochigi, Japan), Takayuki Cho (Tochigi, Japan), Shunsuke Koshioka (Tochigi, Japan), Hajime Tokunaga (Yokohama, Japan) and Masami Jintyou (Shimotsuga, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The ...