US Patent Issued to Semiconductor Energy Laboratory on March 25 for "Method for manufacturing semiconductor device with impurity doped oxide semiconductor layer" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,119, issued on March 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for manufacturing semiconductor device with impurity doped oxide semiconductor layer" was invented by Junichi Koezuka (Tochigi, Japan), Toshimitsu Obonai (Tochigi, Japan), Masami Jintyou (Tochigi, Japan) and Daisuke Kurosaki (Tochigi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor la...